Semiconductor device and manufacturing method thereof
OwnerTomohiro Saito, Kyoichi Suguroinventors
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a substrate having a silicon layer on at least a surface thereof; an insulating film formed on the silicon layer; a first electrode formed on the insulating film and including a first metal thin film and a film having silicon formed on the first metal thin film; and a second electrode formed on the insulating film and including a metal silicide which is an alloy of the first metal and silicon, and a film having silicon formed on the metal silicide, wherein the first electrode is formed on a surface of the first metal thin film, and further includes a compound which controls a reaction of the first metal and the silicon.
Claims17
A semiconductor device comprising:
- a substrate having a silicon layer on at least a surface thereof;
- an insulating film formed on the silicon layer;
- a first electrode formed on the insulating film and including a first metal thin film and a film having silicon formed on the first metal thin film;
- and
- a second electrode formed on the insulating film and including a metal silicide which is an alloy of the first metal and silicon, and a film having silicon formed on the metal silicide,
- wherein the first electrode further includes a compound which controls a reaction of the first metal and the silicon, and the compound being formed on a surface of the first metal thin film.
A semiconductor device comprising:
- a substrate having a silicon layer on at least a surface thereof;
- an insulating film formed on the silicon layer;
- a first electrode formed on the insulating film and including a first metal silicide which is an alloy of a first metal, a second metal different from the first metal, and silicon;
- and
- a second electrode formed on the insulating film and including a second metal silicide which is an alloy of the first metal and silicon.
A method of manufacturing a semiconductor device comprising:
- forming an insulating film on a silicon layer of a substrate having the silicon layer on at least a surface thereof;
- forming a first metal thin film made of a first metal over the insulating film;
- selectively subjecting a region for a first electrode to a surface treatment, the region for the first electrode being included in a first metal thin film formation region;
- forming polycrystalline silicon or amorphous silicon over the substrate;
- and
- reacting the first metal with the polycrystalline silicon or amorphous silicon in a region for a second electrode, the region for the second electrode being included in the first metal thin film region,
- wherein the surface treatment is a treatment to control the reaction of the first metal and the polycrystalline silicon or of the first metal and the amorphous silicon.
A method of manufacturing a semiconductor device, comprising:
- forming an insulating film on a silicon layer of a substrate having the silicon layer on at least a surface thereof;
- forming a metal silicide including a first metal over the insulating film;
- selectively forming a thin film including a second metal in a part of a region on the metal silicide, the second metal being able to react with the first metal;
- and
- reacting a metal silicide including the first metal with the thin film including the second metal to form an alloy having a work function different from a work function of the first metal.
Dependencies are inferred from the claim text.