Semiconductor device full-wave rectifier circuit and half-wave rectifier circuit

A full-wave rectifier circuit comprising:

• four rectifying devices that are connected in a bridge configuration,
• wherein at least one of the rectifying devices comprising;
• a semiconductor substrate of a first general conductivity type,
• a first well region of a second general conductivity type disposed in a surface region of the semiconductor substrate,
• a second well region of the first general conductivity type disposed in the first well region,
• a first diffusion layer of the second general conductivity type disposed in the first well region,
• a second diffusion layer of the first general conductivity type that is disposed in the second well region and electrically connected with the first diffusion layer, and
• a third diffusion layer of the second general conductivity type disposed in the second well region.

A half-wave rectifier circuit comprising:

• a semiconductor substrate of a first general conductivity type;
• a first well region of a second general conductivity type disposed in a surface region of the semiconductor substrate;
• a second well region of the first general conductivity type disposed in the first well region;
• a first diffusion layer of the second general conductivity type disposed in the first well region;
• a second diffusion layer of the first general conductivity type that is disposed in the second well region and electrically connected with the first diffusion layer;
• a third diffusion layer of the second general conductivity type disposed in the second well region;
• and
• an output capacitor electrically connected with the third diffusion layer.