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AssigneeSiltronic AG
InventorsRupert Krautbauer, Gerhard Huettl, Andrej Lenz, Erwin-Peter Mayer, Rainer Winkler
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A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.
A semiconductor wafer comprising a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, an epitaxial layer on the front surface, and an n++ or p++ doped layer with a lower resistivity than the substrate wafer, positioned below the epitaxial layer and extending into the substrate wafer.
A process for producing an epitaxially coated semiconductor wafer with low resistivity below the epitaxial layer, comprising
Dependencies are inferred from the claim text.