Non-volatile memory, non-volatile memory cell and operation thereof

A method of operating a non-volatile memory cell having a first conductive state of a first drain, a second drain and a source in a substrate, a word line crossing over the first, the second drain and the source, a charge-trapping layer between the word lines and the substrate that between the first, the second drains and the source, a first dielectric layer between the charge-trapping layer and the substrate, a second dielectric layer between the word lines and the charge-trapping layer, a first conductive state of a lightly doped region close to the top surface of the substrate on one side of each first, the second drain and the source, and a second conductive state of a pocket-doped region on another side of each first, the second drain and the source, the operating method comprising the steps of:

• performing a programming operation by applying a first bias voltage to the word lines, applying a second bias voltage to the source, connecting the first drain to a ground and setting the second drain to a floating state, wherein the first bias voltage is lower than the second bias voltage.