Solid-state imaging device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMotonari Katsuno, Ryouhei Miyagawa, Masayuki Matsunaga
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Abstract
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
Claims9
A solid-state imaging device comprising:
- a photodiode which performs photoelectric conversion of incident light into signal charge;
- a transfer transistor which transfers the signal charge accumulated in said photodiode;
- a detection capacitor which accumulates the signal charge transferred by said transfer transistor;
- and
- a reset transistor which discharges, into a drain, the signal charge accumulated in said detection capacitor,
- wherein said photodiode, said transfer transistor, said detection capacitor and said reset transistor are formed on a semiconductor substrate, and
- ions are distributed at least on a sidewall of a channel below a gate electrode of said reset transistor, the ions enhancing generation of carriers of an opposite polarity to the channel.
Dependencies are inferred from the claim text.