Lattice-mismatched semiconductor structures employing seed layers and related fabrication methods
AssigneeAmberWave Systems Corporation
InventorZhiyuan Cheng
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Abstract
Fabrication of monolithic semiconductor heterostructures and semiconductor devices based thereon employs isolated seed regions for facilitating elastic lattice conformation between the lattice-mismatched materials. Relative thicknesses of the materials are selected to introduce desirable strain distribution within the heterostructure for improved functionality and performance.
Claims40
A semiconductor heterostructure comprising:
- (a) a substrate having a surface and comprising a first semiconductor material;
- (b) a seed region disposed above the substrate forming a gap therebetween, the seed region having a top surface, a bottom surface, and at least one side surface and comprising a second semiconductor material;
- (c) a support structure for supporting the seed region;
- and
- (d) an epitaxial region disposed adjacent to the seed region and comprising a third semiconductor material, wherein at least one of the epitaxial region and the seed region is at least partially strained.
A method of fabricating a semiconductor device, the method comprising:
- (a) providing a substrate comprising:
- (i) a dielectric layer disposed over a base semiconductor layer, and
- (ii) a top semiconductor layer disposed over the dielectric layer, the base layer and the top layer comprising silicon;
- (b) forming a seed region supported above the base layer of the substrate and defining a gap therebetween, the seed region having a top surface and a bottom surface;
- and
- (c) growing an epitaxial region adjacent to the seed region, wherein at least one of the epitaxial region and the seed region is at least partially strained.
A method of fabricating a semiconductor device, the method comprising:
- (a) providing a substrate comprising a first semiconductor material;
- (b) providing a seed region above the substrate and defining a gap therebetween, the seed region having a top surface and a bottom surface and comprising a second semiconductor material;
- and
- (c) growing, adjacent to the seed region, an epitaxial region comprising a third semiconductor material, wherein at least one of the epitaxial region and the seed region is at least partially strained.
A method of fabricating a semiconductor device, the method comprising:
- (a) providing a substrate comprising a first semiconductor material;
- (b) providing an active area region supported above the substrate and defining a gap therebetween, the active area region comprising a second semiconductor material at least partially under a first type of strain;
- and
- (c) at least partially filling the gap with a stressed dielectric material to induce a second type of strain in the active area region.
Dependencies are inferred from the claim text.