Back to results
US 2006/0131571 A1Published application
Switchable circuit assemblies and semiconductor constructions
AssigneeMicron Technology, Inc.
InventorTerry Gilton
Life of this patent
Estimating the term…
Abstract
The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores of the porous silicon matrix, and the material has two stable states. A second conductive layer is formed over the porous silicon matrix. A current flow between the first and second conductive layers is influenced by which of the stable states the material is in.
Claims23
1-69. (canceled)
A switchable circuit assembly, comprising:
- a porous matrix supported by a substrate;
- active molecular switchable memory material within pores of the porous matrix;
- and
- an electrical connection to the porous matrix having the switchable memory material therein.
1 more element
A switchable circuit assembly, comprising:
- a semiconductive material substrate;
- at least one n-type doped region within the substrate and beneath an uppermost surface of the substrate;
- at least one porous matrix over the at least one n-type doped region;
- an active molecular switchable memory material within pores of the at least one porous matrix;
- and
- a conductive line over and in electrical contact with the at least one porous matrix having the switchable memory material therein.
3 more elements
A semiconductor construction, comprising:
- a monocrystalline silicon substrate;
- an insulative material over the semiconductor substrate;
- trenches extending within the insulative material;
- a first conductive wiring layer within the trenches and partially filling the trenches, the first conductive wiring layer comprising n-type conductively-doped silicon;
- porous silicon over and directly against the n-type conductively-doped silicon of the first conductive wiring layer within the trenches, the porous silicon being p-type doped;
- an active molecular switchable memory material within pores of the p-type doped porous silicon;
- and
- a second conductive wiring layer over and directly against the p-type doped porous silicon and active molecular switchable memory material therein.
5 more elements
Dependencies are inferred from the claim text.