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US 2006/0130761 A1Published application
Thin film processing system and method
AssigneeCanon Anelva Corporation
InventorJunro Sakai
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AssigneeCanon Anelva Corporation
InventorJunro Sakai
Estimating the term…
A thin film processing system alternately introducing two types of material gases into a reaction vessel unit so as to process the surface of a substrate, provided with a reaction vessel (first chamber) formed inside the reaction vessel unit and into which a first material gas is introduced, a reaction vessel (second chamber) formed inside the reaction vessel unit stacked over this and into which a second material gas is introduced, an opening formed in a wall between the two adjoining reaction vessels, a plurality of partition plates moving back and forth between the two reaction vessels in a coordinated manner, one of which designed to close the opening and at least one of which carrying a substrate, and a material gas feed mechanism and exhaust mechanism for supplying the first material gas and second material gas to the substrate parallel to the substrate surface in the two vessels.
A thin film processing system alternately introducing at least two types of material gases into a reaction vessel unit so as to process a surface of a substrate, the system comprising:
A method of thin film processing in a reaction vessel unit having a first chamber formed inside said reaction vessel unit, a second chamber formed inside said reaction vessel unit stacked adjacent said first chamber, and an opening formed in a wall between the adjoining first chamber and second chamber, the method comprising:
Dependencies are inferred from the claim text.