Process for producing silicon carbide crystals having increased minority carrier lifetimes
AssigneeCree, Inc.
InventorsCalvin Carter, Jason Jenny, David Malta, Hudson Hobgood, Valeri Tsvetkov, Mrinal Das
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Abstract
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
Claims31
A process for producing silicon carbide crystals having increased minority carrier lifetimes, comprising:
- heating a silicon carbide crystal having a first concentration of minority carrier recombination centers resulting in a first minority carrier lifetime and thereafter cooling the heated silicon carbide crystal at a rate sufficiently slow to provide a silicon carbide crystal having a second concentration of minority carrier recombination centers that is lower than the first concentration thereby providing a material having an increased minority carrier lifetime.
A bulk silicon carbide single crystal having a minority carrier lifetime of at least about 1 microseconds.
A semiconductor device comprising a silicon carbide single crystal having a minority carrier lifetime of at least about 1 microseconds.
A process for the production of a device comprising a silicon carbide crystal exhibiting increased minority carrier lifetime, comprising:
- heating a silicon carbide crystal having a first concentration of minority carrier recombination centers resulting in a first minority carrier lifetime and thereafter cooling the heated silicon carbide crystal at a rate sufficiently slow to provide a silicon carbide crystal having a second concentration of minority carrier recombination centers that is lower than the first concentration thereby providing a material having an increased minority carrier lifetime;
- and
- incorporating said silicon carbide crystal into a device.
Dependencies are inferred from the claim text.