Photo-detector and related methods
AssigneeLitton Systems, Inc.
InventorHenry Abbink
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Abstract
An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.
Claims20
An apparatus comprising at least one multilayer wafer, the at least one multi-layer wafer including a device layer adjacent to a barrier layer, wherein the device layer comprises at least two photoconductive regions separated by an etched channel extending through the device layer.
An accelerometer comprising at least two photodiodes wherein the position of the photodiodes relative to each other is determined by the size and position of one or more etched regions of a device layer used to form the at least two photodiodes.
A method of forming an apparatus including a plurality of photodiodes comprising:
- obtaining a multilayer wafer comprising at least a device layer separated from a handle layer by a barrier layer;
- modifying the device layer to form a plurality of photoconductive regions;
- separating the photoconductive regions by etching away the device layer between the photoconductive regions;
- and
- forming a first plurality of electrically conductive pads or traces on the photoconductive regions.
Dependencies are inferred from the claim text.