Method of manufacturing semiconductor device having oxide films with different thickness
AssigneeElpida Memory, Inc.
InventorTakayuki Kanda
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Abstract
After a first gate oxide film is formed on a substrate, a nitride layer is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film in the thinner film part area and a third gate oxide film in a thicker film part area. By executing second oxynitriding process, nitride layers are formed at the thinner and the thicker part areas.
Claims30
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein each of said gate insulating films includes a two-layer structure comprising an oxide layer and a nitride layer disposed on said oxide layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein each of said gate insulating films includes a three layer structure including lower and upper oxide layers and a nitride layer disposed between said lower and said upper oxide layers.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein each of said gate insulating films includes a two-layer structure comprising a nitride layer and an oxide layer disposed on said nitride layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein one of said gate insulating films includes a two layer structure comprising a first nitride layer and a first oxide layer, and
- wherein the other of said gate insulating films includes a three layer structure comprising second and third oxide layers and a second nitride layer disposed between said second and said third oxide layers.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein one of said gate insulating films includes a three layer structure comprising first and second nitride layers and an oxide layer disposed between said first and said second nitride layers.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein one of said gate insulating films includes a four layer structure comprises a lower nitride layer, a lower oxide layer disposed on said lower nitride layer, an upper nitride layer disposed on said lower oxide layer and an upper oxide layer disposed on said upper nitride layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein one of said gate insulating films includes a four layer structure comprising a lower oxide layer, a lower nitride layer disposed on said lower oxide layer, an upper oxide layer disposed on said lower nitride layer and an upper nitride layer disposed on said upper oxide layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- two gate insulating films having different thicknesses on said semiconductor substrate,
- wherein one of said gate insulating films includes a five-layer structure comprising three nitride layers and two oxide layers which are alternately disposed.
A semiconductor device having two gate insulating film different from each other in thickness, produced by a process comprising:
- executing a first oxide process for forming a first oxide layer;
- executing a nitriding process for forming a nitride layer;
- executing an etching process for partially etching the first oxide layer;
- and
- executing a second oxide process for forming a second oxide layer.
Dependencies are inferred from the claim text.