Method for cleaning substrate processing chamber
AssigneeTokyo Electron Limited
InventorsHideaki Yamasaki, Kazuhito Nakamura, Koumei Matsuzawa, Tsukasa Matsuda, Yumiko Kawano
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Abstract
A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.
Claims12
A method of cleaning a substrate processing container of a substrate processor that processes a target substrate, comprising:
- a gas introduction step of introducing NF3 gas into a remote plasma generating unit of the substrate processor;
- a reactive species generating step of exciting the NF3 gas, and generating reactive species by the remote plasma generating unit;
- and
- a reaction step of supplying the reactive species to the substrate processing container from the remote plasma generating unit, and pressurizing the substrate processing container at 1333 Pa or greater to recombine the reactive species and remove sediment in the substrate processing container with the recombined reactive species.
4-5. (canceled)
Dependencies are inferred from the claim text.