Vapor phase growth apparatus
AssigneeHitachi Cable, Ltd.
InventorHisataka Nagai
Life of this patent
Estimating the term…
Abstract
A vapor phase growth apparatus has a plurality of rotation susceptors to hold the semiconductor wafer, and a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing. The plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common gear that allows each of the plurality of rotation susceptors to rotate on its center axis. The outermost end of rotation susceptor is substantially aligned with the outermost end of revolution susceptor and the pinion gear is located directly above the bearing.
Claims10
A vapor phase growth apparatus, comprising:
- a source gas inlet;
- a heater to heat a semiconductor wafer;
- a gas exhaust;
- a plurality of rotation susceptors to hold the semiconductor wafer;
- a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing;
- wherein the plurality of rotation susceptors are annually disposed on the periphery of the revolution susceptor,
- the plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common internal gear that is located outside of the revolution susceptor, and
- the pinion gear provided on the plurality of rotation susceptors is located directly above the bearing.
A vapor phase growth apparatus, comprising:
- a source gas inlet;
- a heater to heat a semiconductor wafer;
- a gas exhaust;
- a plurality of rotation susceptors to hold the semiconductor wafer;
- a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing;
- wherein the plurality of rotation susceptors are annually disposed on the periphery of the revolution susceptor,
- the plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common external gear that is located inside of the revolution susceptor, and
- the pinion gear provided on the plurality of rotation susceptors is located directly above the bearing.
A vapor phase growth apparatus, comprising:
- a source gas inlet;
- a heater to heat a semiconductor wafer;
- a gas exhaust;
- a plurality of rotation susceptors to hold the semiconductor wafer;
- a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing;
- wherein the plurality of rotation susceptors are annually disposed on the periphery of the revolution susceptor,
- the plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common gear that allows each of the plurality of rotation susceptors to rotate on its center axis, and
- the plurality of rotation susceptors each comprise an outermost end that is substantially aligned with an outermost end of the revolution susceptor.
Dependencies are inferred from the claim text.