Substrate processing method and substrate processing apparatus

A substrate processing apparatus, comprising:

• a chamber housing a substrate having a resist film formed thereon and equipped with a heating mechanism;
• a water vapor supply section for supplying a water vapor into the chamber;
• an ozone supply section for supplying ozone into the chamber;
• and
• a control section for executing a process for denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber with the inner region of the chamber housing the substrate retained at a prescribed temperature, while a water vapor is supplied into the chamber at a prescribed flow rate with the ozone supply amount being adjusted relative to the amount of the water vapor such that dew is not formed within the chamber.

A substrate processing apparatus, comprising:

• a chamber housing a substrate having a resist film formed thereon and equipped with a heating mechanism;
• a water vapor supply section for supplying a water vapor into the chamber;
• an ozone supply section for supplying ozone into the chamber;
• a liquid process section for supplying a prescribed process liquid onto the substrate for carrying out a liquid processing;
• and
• a control section for executing a process for denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber housing the substrate retained at a prescribed temperature while a water vapor is supplied into the chamber at a prescribed flow rate with the ozone supply amount being adjusted relative to the amount of the water vapor such that dew is not formed within the chamber, and for executing, and for executing a process for removing the denatured resist film formed on the substrate with the process liquid.

A computer program containing a software which, when executed, causes a computer to control a substrate processing apparatus, the software causing the computer to execute a substrate processing method to remove a resist film from the substrate comprising:

• maintaining an inner region of the chamber housing a substrate having a resist film formed thereon at a prescribed temperature;
• denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented;
• and
• processing the substrate with a prescribed liquid material so as to remove the denatured resist film from the substrate.

A storage medium that can be read by a computer, the storage medium containing a software which, when executed, causes a computer to control the substrate processing apparatus, the software causing the computer to execute a substrate processing method to remove a resist film from the substrate comprising:

• maintaining an inner region of the chamber housing a substrate having a resist film formed thereon at a prescribed temperature;
• denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented;
• and
• processing the substrate with a prescribed liquid material, thereby removing the denatured resist film from the substrate.