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AssigneeCredence Systems Corporation
InventorsChristian Boit, Theodore Lundquist, Chun-Cheng Tsao, Uwe Kerst, Stephan Schoemann, Peter Sadewater
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Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.
A method of editing an integrated circuit having a semiconductor substrate and having at least one semiconductor structure formed therein, the method comprising:
A method of forming a localized ohmic contact between a conductive material and a semiconductor material comprising the operation of:
A method of forming a localized ohmic contact between a conductive material and a semiconductor structure comprising the operation of:
Dependencies are inferred from the claim text.