Method of providing contact via to a surface
AssigneeProMOS Technologies Inc.
InventorsKuei-Chang Tsai, Chunyuan Chao, Chia-Shun Hsiao
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Abstract
A contact via to a surface of a semiconductor material is provided, the contact via having a sidewall which is produced by anisotropically etching a dielectric layer which is placed on via openings. A protective layer is provided on the surface of the semiconductor material. To protect the substrate, an initial etch through an interlayer dielectric is performed to create an initial via which extends toward, but not into the substrate. At least a portion of the protective layer is retained on the substrate. In another step, the final contact via is created. During this step the protective layer is penetrated to open a via to the surface of the semiconductor material.
Claims10
A method of providing a contact via to a surface of a material, the method comprising:
- forming a first dielectric layer on the surface;
- forming a second dielectric layer on the first dielectric layer;
- providing a first aperture which extends from a surface of the second dielectric layer toward the surface of the material for a distance which is less than a combined thickness of the first and second dielectric layers;
- providing a third dielectric layer covering a surface of the aperture and an exposed surface of the first dielectric layer;
- and
- removing a portion of the third dielectric layer and a portion of the first dielectric layer to expose a portion of the surface of the material.
Dependencies are inferred from the claim text.