Method of producing a semiconductor device having an oxide film
AssigneeOki Semiconductor Co., Ltd.
InventorsYuki Saito, Yasutaka Kobayashi
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Abstract
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.
Claims13
1-10. (canceled)
A producing method of a semiconductor device having a trapezoidal portion comprising a first oxide film and a plurality of other films, wherein
- a first peripheral region to which an end face of said first oxide film belongs, and a first central region surrounded by said first peripheral region are defined concerning said first oxide film,
- thermal treatment is carried out after said trapezoidal portion is formed such that a film thickness of said first oxide film in said first peripheral region becomes thicker than that of the first oxide film in said first central region.
Dependencies are inferred from the claim text.