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US 2006/0079077 A1Published application
Semiconductor device manufacturing method
OwnerMasashi Takahashiinventor
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Abstract
A manufacturing method for semiconductor devices having MOSFET gate insulation films. The method includes forming a silicon oxide film, forming a silicon nitride film, nitriding the silicon nitride film, and heat treatment.
Claims18
A manufacturing method for a semiconductor device, comprising:
- forming a silicon oxide film on a semiconductor substrate;
- forming a silicon nitride film on the silicon oxide film;
- nitriding the silicon nitride film;
- and
- heat treatment following nitriding of the silicon nitride film.
2 more elements
A manufacturing method for a semiconductor device, comprising:
- forming a silicon oxide film on a semiconductor substrate;
- forming a silicon nitride film on the silicon oxide film;
- first heat treatment following formation of the silicon nitride film;
- nitriding the silicon nitride film following said first heat treatment;
- and
- second heat treatment following the nitriding of the silicon nitride film.
3 more elements
Dependencies are inferred from the claim text.