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US 2006/0079075 A1Published application
Gate structures with silicide sidewall barriers and methods of manufacturing the same
OwnerChang-Won Lee, Sun-Pil Youn +6inventors
InventorsChang-Won Lee, Sun-Pil Youn, Gil-Heyun Choi, Byung-Hak Lee, Hee-Sook Park, Dong-Chan Lim, Jong-Ryeol Yoo, Woong-Hee Sohn
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Abstract
A gate structure includes a gate insulation layer on a substrate, a polysilicon layer pattern on the gate insulation layer, a composite metal layer pattern on the polysilicon layer pattern, and a metal silicide layer pattern on a sidewall of the composite metal layer pattern.
Claims29
A gate structure comprising:
- a gate insulation layer on a substrate;
- a polysilicon layer pattern on the gate insulation layer;
- a composite metal layer pattern on the polysilicon layer pattern;
- and
- a metal silicide layer pattern on a sidewall of the composite metal layer pattern.
2 more elements
A gate structure comprising:
- a gate insulation layer on a substrate;
- a polysilicon layer pattern on the gate insulation layer;
- a composite metal layer pattern on a central portion of the polysilicon layer pattern and having a width less than that of the polysilicon layer pattern;
- a metal silicide layer pattern disposed on a sidewall of the composite metal layer pattern;
- and
- a passivation layer disposed on sidewalls of the polysilicon layer pattern and the metal silicide layer pattern.
3 more elements
A method of manufacturing a gate structure, comprising:
- forming a gate insulation layer on a substrate;
- forming a polysilicon layer, a composite metal layer and a capping layer pattern on the gate insulation layer;
- etching the composite metal layer using the capping layer pattern as an etching mask to form a composite metal layer pattern;
- forming a metal silicide layer pattern on a sidewall of the composite metal layer pattern;
- and
- etching the polysilicon layer using the capping layer pattern as an etching mask to form a polysilicon layer pattern underlying the composite metal layer pattern.
3 more elements
A method of manufacturing a gate structure, comprising:
- forming a gate insulation layer on a substrate;
- forming a polysilicon layer, a composite metal layer and a capping layer pattern on the gate insulation layer;
- etching the composite metal layer using the capping layer pattern as an etching mask to form a composite metal layer pattern, the composite metal layer pattern having a width less than that of the capping layer pattern;
- forming a sacrificial polysilicon layer on the substrate, the composite metal layer pattern and the capping layer pattern;
- thermally treating the sacrificial polysilicon layer to form a metal silicide layer pattern on the sidewall of the composite metal layer pattern;
- removing a remaining portion of the sacrificial polysilicon layer;
- etching the polysilicon layer using the capping layer pattern as an etching mask to form a polysilicon layer pattern;
- and
- oxidizing the polysilicon layer pattern and the metal silicide layer to form a passivation layer.
6 more elements
Dependencies are inferred from the claim text.