Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, comprising the steps of:

• forming a first hydrogen barrier film;
• forming a capacitor device on the first hydrogen barrier film;
• and
• forming a second hydrogen barrier film so that the second hydrogen barrier film covers the capacitor device and comes into contact with the first hydrogen barrier film around the perimeter of the capacitor device,
• wherein the first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other, and
• the first and second hydrogen barrier films adhere to each other by chemical bonding of the atoms of the common type.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a first hydrogen barrier film;
• forming a capacitor device on the first hydrogen barrier film;
• and
• forming a second hydrogen barrier film so that the second hydrogen barrier film covers the capacitor device and comes into contact with the first hydrogen barrier film around the perimeter of the capacitor device,
• wherein the first and second hydrogen barrier films each contain metal atoms for allowing the first and second hydrogen barrier films to adhere to each other by mutual diffusion action of the metal atoms therebetween, and
• around the perimeter of the capacitor device, the first and second hydrogen barrier films adhere to each other by mutual diffusion action of the metal atoms therebetween.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a first hydrogen barrier film;
• forming a capacitor device on the first hydrogen barrier film;
• oxidizing an exposed surface of the first hydrogen barrier film which is located around the perimeter of the capacitor device;
• and
• forming a second hydrogen barrier film containing oxygen so that the second hydrogen barrier film covers the capacitor device and comes into contact with the oxidized surface.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a first hydrogen barrier film;
• forming a capacitor device on the first hydrogen barrier film;
• nitriding an exposed surface of the first hydrogen barrier film which is located around the perimeter of the capacitor device;
• and
• forming a second hydrogen barrier film containing nitrogen so that the second hydrogen barrier film covers the capacitor device and comes into contact with the nitrided surface.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a first hydrogen barrier film;
• forming a capacitor device on the first hydrogen barrier film;
• forming an adhesion layer in an exposed portion of the first hydrogen barrier film which is located around the perimeter of the capacitor device;
• and
• forming a second hydrogen barrier film so that the second hydrogen barrier film covers the capacitor device and comes into contact with the adhesion layer.