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US 2006/0079049 A1Published application
Method for fabricating a capacitor
AssigneeQimonda AG
InventorsSrivatsa Kundalgurki, Peter Moll, Dirk Manger, Kristin Schupke, Till Schloesser
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Abstract
In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into the auxiliary layer (40), and the electrode structure of the capacitor is formed in the recess. As an example, the auxiliary layer can be a semiconductor layer (40).
Claims43
A method for fabricating a capacitor, the method comprising:
- forming a semiconductor layer over a substrate;
- etching a recess into the semiconductor layer, the recess determining the shape of the electrode structure;
- and
- forming the electrode structure of the capacitor in the recess.
1 more element
The method for fabricating a capacitor, the method comprising:
- forming an auxiliary layer over a substrate;
- etching a recess in the auxiliary layer, the recess determining the shape of an electrode structure;
- and
- forming the electrode structure in the recess, wherein during the production of the electrode structure, at each point in the process the structure that has been produced to that point in the process is mechanically supported.
1 more element
Dependencies are inferred from the claim text.