Integration of multiple gate dielectrics by surface protection

A method for forming a multi gate oxide structure, comprising the steps of:

• providing a semiconductor substrate having an initial oxide layer thereon;
• depositing and patterning a first layer of photoresist on the initial oxide layer, thereby forming a first region in which the initial oxide layer is exposed;
• etching the initial oxide layer within the first region, thereby forming a first etched region;
• forming a first gate oxide layer within the first etched region;
• depositing and patterning a second layer of photoresist on the initial oxide layer and first oxide layer, thereby forming a second region in which the initial oxide layer is exposed;
• etching the exposed initial oxide layer within the second region, thereby forming a second etched region;
• and
• growing a second oxide layer within the second etched region;
• wherein the first and second etched regions do not substantially overlap.

A multi gate oxide structure, comprising:

• a semiconductor substrate having a first major surface with first and second regions thereon, wherein said first region is vertically disposed by a distance d1 from said first major surface, and wherein said second region is vertically disposed by a distance d2 from said first major surface;
• a first gate oxide layer having a first average thickness disposed within said first region;
• and
• a second gate oxide layer having a second average thickness disposed within said second region.

A multi gate oxide structure, comprising:

• a semiconductor substrate;
• a first gate oxide layer disposed over a first region of said substrate;
• a sacrificial oxide layer disposed over a second region of said substrate;
• a mask disposed over said first oxide layer and over a first portion of said sacrificial oxide layer, said mask being patterned so as to expose a second portion of said sacrificial oxide layer.