Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same

A method of fabricating an EEPROM, comprising:

• forming mold patterns on a predetermined region of a semiconductor substrate;
• forming a tunnel insulation layer on a resultant structure where the mold patterns are formed;
• forming a tunnel spacer on sidewalls of the mold patterns to cover a top surface and a sidewall of the tunnel insulation layer;
• forming a gate insulation layer on the semiconductor substrate between the tunnel spacers, the gate insulation layer being thicker than the tunnel insulation layer;
• removing the tunnel spacers to expose the tunnel insulation layer;
• forming a first conductive layer on the resultant structure where the tunnel spacers have been removed;
• planarizing the first conductive layer down to a top surface of the mold pattern to form a first conductive pattern filling a gap region between the mold patterns;
• removing the exposed mold patterns;
• forming an intergate dielectric and a second conductive layer on the resultant structure where the mold patterns have been removed;
• and
• patterning the second conductive layer, the intergate dielectric, and the first conductive pattern to form gate electrodes of a memory transistor and a selection transistor.