Method of manufacturing gate, thin film transistor and pixel
OwnerTa-Jung Su, Chin-Tzu Kao +2inventors
InventorsTa-Jung Su, Chin-Tzu Kao, Mi-Cheng Lai, Yi-Tsai Hsu
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Abstract
A method of manufacturing a gate, a thin film transistor and a pixel. First, a patterned mask layer is formed on a substrate. The mask layer exposes an area for forming the gate. A gate is formed on the exposed area of the substrate and then the mask layer is removed. The method produces a gate having a well-defined profile. When the method is applied to form a transistor or a pixel, coverage of a subsequently form film layer is improved and point discharge is prevented.
Claims18
A method of fabricating a gate, comprising the steps of:
- providing a substrate;
- forming a patterned mask layer over the substrate, wherein the patterned mask layer exposes an area on the substrate for forming the gate;
- forming a gate on the substrate within the exposed area;
- and
- removing the mask layer.
A method of fabricating a pixel unit, comprising the steps of:
- providing a substrate;
- forming a patterned mask layer over the substrate, wherein the patterned mask layer exposes an area on the substrate for forming the gate;
- forming a gate on the substrate within the exposed area;
- removing the mask layer;
- forming an insulating layer over the substrate to cover the gate;
- forming a channel layer over the insulating layer above the gate;
- forming a source and a drain over the channel layer;
- forming a passivation layer over the substrate, wherein the passivation layer has an opening that exposes a portion of the drain;
- and
- forming a pixel electrode over the passivation layer such that the pixel electrode is electrically connected to the drain via the opening.
A method of fabricating a thin film transistor, comprising the steps of:
- providing a substrate;
- forming a patterned mask layer over the substrate, wherein the mask layer exposes an area on the substrate for forming the gate;
- forming a gate within the exposed area;
- removing the mask layer;
- forming an insulating layer over the substrate to cover the gate;
- forming a channel layer over the insulating layer above the gate;
- and
- forming a source and a drain over the channel layer.
Dependencies are inferred from the claim text.