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US 2006/0079005 A1Published application
Method for making a semiconductor device having a high-k gate dielectric
AssigneeIntel Corporation
InventorsJustin Brask, Jack Kavalieros, Mark Doczy, Matthew Metz, Suman Datta, Robert Chau
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Abstract
A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface.
Claims21
A method for making a semiconductor device comprising:
- converting a hydrophobic surface of a substrate into a hydrophilic surface;
- and
- forming a high-k gate dielectric layer on the hydrophilic surface.
A method for making a semiconductor device comprising:
- converting a hydrophobic surface of a substrate into a hydrophilic surface, wherein the hydrophobic surface is converted into the hydrophilic surface by first converting the hydrophobic surface into an intermediate surface then converting the intermediate surface into the hydrophilic surface;
- and
- forming a high-k gate dielectric layer on the hydrophilic surface.
A method for making a semiconductor device comprising:
- exposing a silicon containing substrate to hydrogen to generate a hydrophobic surface on the silicon containing substrate;
- exposing the hydrophobic surface to chlorine to generate an intermediate surface on the silicon containing substrate;
- exposing the intermediate surface to steam to generate a hydrophilic surface on the silicon containing substrate, and
- forming a high-k gate dielectric layer on the hydrophilic surface of the silicon containing substrate.
1 more element
A method for making a semiconductor device comprising:
- exposing a silicon containing substrate to hydrofluoric acid to generate a hydrophobic surface on the silicon containing substrate;
- exposing the hydrophobic surface to chlorine to generate an intermediate surface on the silicon containing substrate that may react with steam;
- exposing the intermediate surface to steam to generate a hydrophilic surface on the silicon containing substrate, and
- forming a high-k gate dielectric layer on the hydrophilic surface of the silicon containing substrate, the high-k gate dielectric layer being formed directly on the hydrophilic surface without a buffer layer being present between the high-k gate dielectric layer and the hydrophilic surface.
1 more element
A method for making a semiconductor device comprising:
- converting a hydrophobic surface of a substrate into a hydrophilic surface using a hydrofluoric acid, a halogen, and steam;
- and
- forming a high-k gate dielectric layer on the hydrophilic surface.
Dependencies are inferred from the claim text.