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US 2006/0078818 A1Published application
Near-field exposure photoresist and fine pattern forming method using the same
AssigneeCanon Kabushiki Kaisha
InventorsTakako Yamaguchi, Ryo Kuroda
Life of this patent
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Abstract
A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.
Claims6
A near-field photoresist for formation of a fine pattern with near-field exposure, comprising:
- an alkali-soluble novalac resin;
- a diazyde-type photosensitizer which is photoreactive by the near-field exposure:
- a photoacid generator which generates acid by the near-field exposure;
- and
- a solvent.
2 more elements
-8. (canceled)
Dependencies are inferred from the claim text.