Plasma chemical vapor deposition methods
OwnerSunsoo Lee, Haemoon Lee +1inventors
InventorsSunsoo Lee, Haemoon Lee, Yeonhong Jee
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Abstract
A plasma chemical vapor deposition (CVD) method is for depositing a metal layer. In the plasma CVD method, a metal source gas is pre-injected into a chamber containing a substrate, and thereafter a plasma is formed in the chamber to deposit the metal layer on the substrate.
Claims38
A chemical vapor deposition (CVD) method for depositing a metal layer, comprising pre-injection of a metal source gas into a chamber containing a substrate, and thereafter forming a plasma in the chamber to deposit the metal layer on the substrate.
A chemical vapor deposition (CVD) method for depositing a metal layer, comprising:
- supplying both a purge gas and a reduction gas into a chamber containing a substrate during each of successive first, second and third time intervals;
- supplying a metal source gas into the chamber during each of the successive second and third time intervals;
- and
- forming a plasma in the chamber during the third time interval and not during the second time interval, wherein the metal layer is deposited on the substrate during the third time interval.
A chemical vapor deposition (CVD) method for depositing a metal layer, comprising:
- placing a substrate into a chamber, wherein the substrate includes an insulating layer extending over a surface of the substrate, and wherein the insulating layer has an opening which exposes a conductive portion of the substrate;
- and
- pre-injecting a metal source gas into the chamber containing the substrate, and thereafter forming a plasma in the chamber to deposit the metal layer on the conductive portion of the substrate.
A chemical vapor deposition (CVD) method for depositing a metal layer, comprising:
- placing a substrate into a chamber, wherein the substrate includes an insulating layer extending over a surface of the substrate, and wherein the insulating layer has an opening which exposes a conductive portion of the substrate;
- supplying both a purge gas and a reduction gas into the chamber containing a substrate during each of successive first, second and third time intervals;
- supplying a metal source gas into the chamber during at least the successive second and third time intervals;
- and
- forming a plasma in the chamber during the third time interval and not during the second time interval, wherein the metal layer is deposited on the conductive portion of substrate during the third interval.
Dependencies are inferred from the claim text.