Porous low dielectric constant compositions and methods for making and using same
AssigneeAir Products and Chemicals, Inc.
InventorsAaron Lukas, Mark O'Neill, Eugene Karwacki, Raymond Vrtis, Jean Vincent
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AssigneeAir Products and Chemicals, Inc.
InventorsAaron Lukas, Mark O'Neill, Eugene Karwacki, Raymond Vrtis, Jean Vincent
Estimating the term…
A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.
A chemical vapor deposition method for forming an organosilicate glass porous film on a substrate having pores and a dielectric constant of 2.7 or less, comprising reacting a precursor mixture comprising:
A composition comprising:
Dependencies are inferred from the claim text.