Light modulator with integrated drive and control circuitry
AssigneeActive Optical Networks, Inc.
InventorsVlad Novotny, Bharat Sastri, Chitranjan Reddy
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Abstract
Described are MEMS mirror arrays monolithically integrated with CMOS control electronics. The MEMS arrays include polysilicon or polysilicon-germanium components that are mechanically superior to metals used in other MEMS applications, but that require process temperatures not compatible with conventional CMOS technologies. CMOS circuits used with the polysilicon or polysilicon-germanium MEMS structures use interconnect materials that can withstand the high temperatures used during MEMS fabrication. These interconnect materials include doped polysilicon, polycides, and tungsten metal.
Claims27
An integrated light modulator comprising:
- a. a plurality of active circuit elements;
- b. a first conductive layer, including a first plurality of conductive traces, patterned over and in electrical contact with the active circuit elements;
- c. a first insulating layer formed over the first conductive layer;
- d. a second conductive layer, including a second plurality of conductive traces, patterned over the first insulating layer and in electrical contact with the active circuit elements, wherein the second conductive layer has a resistivity of at least 5×10−6 ohms-cm;
- and
- e. a second insulating layer formed over the second conductive layer.
An integrated circuit comprising:
- a. a plurality of active circuit elements;
- b. a first conductive layer, including a first plurality of conductive traces, patterned over and in electrical contact with the active circuit elements;
- c. a first insulating layer formed over the first conductive layer;
- d. a second conductive layer, including a second plurality of conductive traces, patterned over the first insulating layer and in electrical contact with the active circuit elements;
- e. a second insulating layer formed over the second conductive layer;
- and
- f. a third conductive layer, including a third plurality of conductive traces, patterned over the second insulating layer and in electrical contact with the active circuit elements, the third conductive layer having a resistivity of at least 5×10−6 ohms-cm.
Dependencies are inferred from the claim text.