Electron source
AssigneeDenki Kagaku Kogyo Kabushiki Kaisha
InventorsYoshinori Terui, Ryozo Nonogaki
Life of this patent
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Abstract
To provide an electron source to be used for a surface analyzer such as a scanning or transmission electron microscope or an Auger electron spectroscope, or an electron beam lithography machine, particularly for a semiconductor wafer inspection apparatus such as a scanning electron microscope to be used at a low acceleration with an electron beam acceleration voltage of up to 1 kV, CD SEM or DR SEM. An electron source wherein a barium supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium, is provided at a portion of a single crystal needle of tungsten or molybdenum.
Claims10
An electron source characterized in that a barium-supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium, is provided at a portion of a single crystal needle of tungsten or molybdenum.
A method for using an electron source, characterized in that an electron source provided with a barium-supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium at a portion of a single crystal needle of tungsten or molybdenum, is used at a needle temperature of from 1000 K to 1300 K.
A method for producing an electron source, characterized in that an electron source provided with a barium-supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium at a portion of a single crystal needle of tungsten or molybdenum, is heated at from 1000 K to 1700 K under application of a positive electric potential.
Dependencies are inferred from the claim text.