Selective capping of copper wiring
AssigneeInternational Business Machines Corporation
InventorsPanayotis Andricacos, Shyng-Tsong Chen, John Cotte, Hariklia Deligianni, Mahadevaiyer Krishnan, Wei-Tsu Tseng, Philippe Vereecken
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Abstract
Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
Claims14
A patterned upper structure comprising a substrate having a dielectric material on the substrate wherein the dielectric material contains at least one trench/via therein;
- a liner located on the bottom and sidewalls of a liner of the at least one trench/via;
- copper located on the liner in the at least one trench/via;
- and a capping structure located on top of the copper and comprising a layer containing at least one member selected from the group consisting of ruthenium, rhenium, osmium, and rhodium.
A patterned upper structure comprising a substrate having a dielectric material on the substrate wherein the dielectric material contains at least one trench/via therein;
- a liner located on the bottom and sidewalls of a liner of the at least one trench/via;
- copper located on the liner in the at least one trench/via;
- and a capping structure located directly on top of the copper and compressing a first metal or alloy layer selected from the group consisting of Co, CoP, CoWP, CoMoP, Ni, NiP, NiWP, NiMoP, NiW, NiMo, CoMo, NiFe, CoFe, NiFeP, NiB, CoB, NiFeB, CoFeB, NiCo, NiCoP, NiCoB, NiWB, NiMoB, CoWB, CoMoB, CoV, NiV, CoFeV, NiFeV, NiCoV, NiCoFeV and NiCo;
- and
- a second metal or alloy layer selected from the group consisting of Ru, Re, Pt, Pd, Rh, Os, NiPd, CoPd, Pb, Sn, Sb, and In.
An apparatus for etching or plating comprising a wafer-holding fixture that permits wafers rotation and another fixture, substantially parallel to the first, which is segmented in ring-shaped segments that can be electrically isolated from each other, and capable of ejecting the electrolyte in doughnut shaped flow regions of progressively increasing or decreasing internal diameter.
An apparatus for etching or plating comprising a wafer-holding fixture that permits wafers rotation and another ring-shaped fixture, substantially parallel to the first, whose area can be changed such that the electrochemical reactions on the wafer are localized and occur in the regions facing the ring-shaped counter electrode.
Dependencies are inferred from the claim text.