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US 2006/0076640 A1Published application
Semiconductor device
AssigneeZetex PLC
InventorsPeter Blair, Paul Jerred, Kevin Lowe, Lee Riley
Life of this patent
Estimating the term…
Abstract
A semiconductor device, comprising a trench extending into the device from a surface. The trench has sidewalls extending along the length of the trench, a depth and a width defined at said surface between said sidewalls. The trench is at least partly filled with a material. At least one of the sidewalls is provided with at least one lateral recess, the or each recess providing a discrete localised increase in said trench width.
Claims28
A semiconductor device, comprising:
- a trench extending into the device from a surface, the trench having sidewalls extending along the length of the trench, the trench having a depth, the trench having a width defined at said surface between said sidewalls, and the trench being at least partly filled with a material;
- wherein at least one of the sidewalls is provided with at least one lateral recess, the or each recess providing a discrete localised increase in said trench width.
A method of fabricating a semiconductor device, the method comprising:
- a) forming a trench extending from a first surface of the device, the trench having sidewalls extending to a depth below the surface, and having a width defined at said surface between said sidewalls, at least one of the sidewalls being provided with at least one recess, the or each recess providing a discrete localised increase in said trench width;
- and
- b) at least partly filling the trench with a first material by chemical vapour deposition.
Dependencies are inferred from the claim text.