Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same

A method of manufacturing a semiconductor substrate comprising:

• forming an insulator to partially cover one main surface of a first single crystal silicon layer;
• epitaxially growing a second single crystal silicon layer on an exposed surface of the first single crystal silicon layer which is not covered with the insulator, to cover an edge portion of the insulator adjacent to the exposed surface;
• and
• forming a non-single crystal silicon layer on an exposed surface of the insulator while further epitaxially growing the second single crystal silicon layer.

A method of manufacturing a semiconductor substrate comprising:

• forming an insulator to partially cover one main surface of a first single crystal silicon layer;
• forming an amorphous silicon layer to cover a surface of the insulator and an exposed surface of the first single crystal silicon layer which is not covered with the insulator;
• and
• heating the amorphous silicon layer until the amorphous silicon layer on the exposed surface of the first single crystal silicon layer which is not covered with the insulator, is modified into a second single crystal silicon layer by selectively and solid-phase epitaxially growing, using the first single crystal silicon layer as a seed layer.

A method of manufacturing a semiconductor device comprising:

• manufacturing a semiconductor substrate;
• the semiconductor substrate including;
• a first single crystal silicon layer;
• an insulator formed to partially cover one main surface of the first single crystal silicon layer;
• a second single crystal silicon layer formed to cover a region of the first single crystal silicon layer which is not covered with the insulator, and to cover an edge portion of the insulator adjacent to the region;
• and
• a non-single crystal silicon layer formed on the insulator, the interface between the non-single crystal silicon layer and the second single crystal silicon layer being positioned on the insulator;
• forming a first semiconductor element on an surface of the first single crystal silicon layer or in a range from the surface to a predetermined inside position of the first single crystal silicon layer, at a position off the insulator of the semiconductor substrate;
• and
• forming a second semiconductor element in a range from a surface of the first single crystal silicon layer to at least inside of the second single crystal silicon layer, at a position off the insulator of the semiconductor substrate.

A method of manufacturing a semiconductor device comprising:

• manufacturing a semiconductor substrate;
• the semiconductor substrate including;
• forming an insulator to partially cover one main surface of a first single crystal silicon layer;
• epitaxially growing a second single crystal silicon layer on an exposed surface of the first single crystal silicon layer which is not covered with the insulator, to cover an edge portion of the insulator adjacent to the exposed surface;
• and
• forming a non-single crystal silicon layer on an exposed surface of the insulator while further epitaxially growing the second single crystal silicon layer;
• forming a first semiconductor element on an surface of the first single crystal silicon layer or in a range from the surface to a predetermined inside position of the first single crystal silicon layer, at a position off the insulator of the semiconductor substrate;
• and
• forming a second semiconductor element in a range from a surface of the first single crystal silicon layer to at least inside of the second single crystal silicon layer, at a position off the insulator of the semiconductor substrate.

A method of manufacturing a semiconductor device comprising:

• manufacturing a semiconductor substrate;
• the semiconductor substrate including;
• forming an insulator to partially cover one main surface of a first single crystal silicon layer;
• forming an amorphous silicon layer to cover a surface of the insulator and an exposed surface of the first single crystal silicon layer which is not covered with the insulator;
• and
• heating the amorphous silicon layer until the amorphous silicon layer on the exposed surface of the first single crystal silicon layer which is not covered with the insulator, is modified into a second single crystal silicon layer by selectively and solid-phase epitaxially growing, using the first single crystal silicon layer as a seed layer;
• forming a first semiconductor element on an surface of the first single crystal silicon layer or in a range from the surface to a predetermined inside position of the first single crystal silicon layer, at a position off the insulator of the semiconductor substrate;
• and
• forming a second semiconductor element in a range from a surface of the first single crystal silicon layer to at least inside of the second single crystal silicon layer, at a position off the insulator of the semiconductor substrate.