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US 2006/0076596 A1Published application
Semiconductor device
AssigneeNEC Electronics Corporation
InventorsHiroaki Ohkubo, Noriaki Oda, Yasutaka Nakashiba
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Abstract
A capacity element with a simple configuration exhibits excellent production reliability. A semiconductor device 100 includes a capacity element consisting of a lower electrode 102, an SiCN film 107 and an upper electrode 113. In an insulating film 101 on a semiconductor substrate is formed a groove, in which the lower electrode 102 is buried. The lower electrode 102 includes two regions, that is, a first lower electrode 103 and a second lower electrode 105, which are separated from each other via the insulating film 101.
Claims11
A semiconductor device comprising:
- an insulating film formed on a semiconductor substrate;
- a lower electrode buried in a groove formed in said insulating film;
- a capacitor film formed on said lower electrode;
- and
- an upper electrode formed on said capacitor film,
- wherein said lower electrode comprises a plurality of electrode regions separated from each other by said insulating film.
3 more elements
Dependencies are inferred from the claim text.