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US 2006/0076584 A1Published application
Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
AssigneeMassachusetts Institute of Technology
InventorsIl-Doo Kim, Harry Tuller, Yong Choi, Akintunde Akinwande
Life of this patent
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Abstract
A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.
Claims18
A transfer layer used for the formation of a semiconductor structure comprising:
- a transparent substrate;
- and
- a buffer layer that is formed on said transparent substrate that includes PbO, PbTiO3, GaN, La0.5Sr0.5CoO3 (LSCO) or LaxPb1-xCoO3 (LPCO), so that separation between said buffer layer and said transparent substrate occurs at substantially high temperatures.
A method of forming a transfer layer used for the formation of a semiconductor structure comprising:
- providing a transparent substrate;
- and
- forming a buffer layer that is formed on said transparent substrate that includes La0.5Sr0.5CoO3 (LSCO) or LaxPb1-xCoO3 (LPCO), PbO, GaN, or PbTiO3 so that separation between said buffer layer and said transparent substrate occurs at substantially high temperatures.
Dependencies are inferred from the claim text.