High electron mobility transistors with Sb-based channels
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsJohn Boos, Brian Bennett, Richard Magno, Brad Tinkham, Nicholas Papanicolou
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Abstract
This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1−y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1−y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.
Claims20
An electronic device comprising a semi-conducting substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer disposed on said buffer layer, a barrier layer of an antimony-based material disposed on said channel layer, and a cap layer disposed on said barrier layer.
High electron mobility transistor containing a semi-conducting substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer material selected from the group consisting essentially of InAsySb1−y wherein y is 0 to 1 disposed on said buffer layer, a barrier layer of an antimony-based material disposed on said channel layer, and a cap layer of InAsySb1−y wherein y is 0 to 1 disposed on said barrier layer.
Dependencies are inferred from the claim text.