High electron mobility epitaxial substrate
AssigneesSumitomo Chemical Company, Limited, Sumika Epi Solution Company, Ltd.
InventorsTakenori Osada, Takayuki Inoue, Noboru Fukuhara
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Abstract
A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers 3 and 9, wherein an emission peak wavelength from the strain channel layer 6 at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer 6.
Claims5
A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer and an AlGaAs layer containing n-type impurities as an electron supplying layer, wherein said InGaAs layer has an emission peak wavelength at 77 K of 1030 nm or more.
Dependencies are inferred from the claim text.