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US 2006/0076313 A1Published application
Etching process and patterning process
AssigneeUnited Microelectronics Corp.
InventorPei-Yu Chou
Life of this patent
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Abstract
An etching process is described. A material layer having a bottom anti-reflection coating (BARC) and a patterned photoresist layer thereon is provided. An etching step is performed to the BARC using the patterned photoresist layer as a mask. A cleaning step is performed to remove the polymer formed on the surface of the patterned photoresist layer. Thereafter, another etching step is performed to the material layer using the patterned photoresist layer as a mask.
Claims15
An etching process, comprising:
- providing a material layer having a bottom anti-reflection coating (BARC) and a patterned photoresist layer thereon;
- etching the BARC using the patterned photoresist layer as a mask, wherein polymer as an etching by-product is formed on the patterned photoresist layer;
- etching the BARC performing a cleaning step to remove the polymer from the patterned photoresist layer;
- and
- etching the material layer using the patterned photoresist layer as a mask, wherein the cleaning step is performed before the step of etching the material layer.
2 more elements
A patterning process, comprising:
- sequentially forming a bottom anti-reflection coating (BARC) and a photoresist layer on a material layer;
- performing a lithography process to pattern the photoresist layer,
- trimming the patterned photoresist layer;
- etching the BARC using the patterned photoresist layer as a mask, wherein polymer as an etching by-product is formed on the patterned photoresist layer.
- performing a cleaning step to remove the polymer from the patterned photoresist layer;
- and
- etching the material layer using the patterned photoresist layer as a mask, wherein the cleaning step is performed before the step of etching the material layer,
- wherein the step of etching the BARC, the cleaning step and the step of etching the material layer are performed in-situ.
5 more elements
Dependencies are inferred from the claim text.