Barrier enhancement process for copper interconnects

A process for applying a metal to a microelectronic work-piece, the microelectronic work-piece including a surface in which are disposed one or more micro-recessed structures, the process comprising:

• (a) forming a barrier layer on the surface of the microelectronic work-piece, including on the walls of the micro-recessed structures;
• (b) forming a barrier enhancement layer over the barrier layer, wherein said enhancement layer comprises a metal alloy selected from the group consisting of Cu—Al, Cu—Mg, Cu—Zn, Cu—Sn, Co—P and Co—W—P;
• and
• (c) electroplating a metal onto the barrier enhancement layer so as to fill the micro-recessed structure.

A process for applying a metal to a microelectronic work-piece, the microelectronic work-piece including a surface in which are disposed one or more micro-recessed structures, the process comprising:

• (a) forming a barrier layer on the surface of the microelectronic work-piece, including on the walls of the micro-recessed structures;
• (b) forming a barrier enhancement layer of a metal alloy over the barrier layer, wherein said metal alloy is selected from the group consisting of Cu—Al, Cu—Mg, Cu—Zn, Cu—Sn, Co—P and Co—W—P;
• (c) forming a seed layer over the enhancement layer;
• and
• (d) electroplating a metal onto the seed layer so as to fill the micro-recessed structure.