Magnetic-field concentration in inductively coupled plasma reactors

A substrate processing system comprising:

• a housing defining a process chamber;
• a substrate holder disposed within the process chamber and configured to support a substrate during substrate processing;
• a gas-delivery system configured to introduce a gas into the process chamber;
• a pressure-control system for maintaining a selected pressure within the process chamber;
• a high-density-plasma generating system operatively coupled with the process chamber, the high-density-plasma generating system including a coil for inductively coupling energy into the plasma and including a magneto-dielectric material for concentrating a magnetic field generated by the coil, wherein:
• the magneto-dielectric material comprises a ferromagnetic material and a dielectric material, the dielectric material provided at greater than 2 wt. % of the magneto-dielectric material;
• and
• the magneto-dielectric material has a thermal conductivity greater than 2 W/mK, an electrical resistivity greater than 103 Ω cm, a residual permittivity greater than 15 and a relative permeability greater than 14;
• and
• a controller for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.

A method for depositing a film on a substrate disposed in a substrate processing chamber, the method comprising:

• flowing a process gas into the substrate processing chamber;
• inductively forming a plasma having an ion density greater than 1011 ions/cm3 from the process gas with a coil;
• concentrating a magnetic field generated by the coil with a magneto-dielectric material disposed proximate the coil;
• and
• depositing the film over the substrate with the plasma in a process that has simultaneous deposition and sputtering components.

A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:

• flowing a process gas comprising a silicon source, an oxygen source, and a fluent gas into the substrate processing chamber;
• inductively forming having an ion density greater than 1011 ions/cm3 from the process gas with a coil;
• concentrating a magnetic field generated by the coil with a magneto-dielectric material, wherein:
• the magneto-dielectric material comprises a ferromagnetic material and a dielectric material, the dielectric material provided at greater than 2 wt. % of the magneto-dielectric material;
• and
• the magneto-dielectric material has a thermal conductivity greater than 2 W/mK, an electrical resistivity greater than 103 Ω cm, a residual permittivity greater than 15 and a relative permeability greater than 1;
• and
• depositing the film over the substrate and within the trench in a process that has simultaneous deposition and sputtering components.