Fabrication of channel wraparound gate structure for field-effect transistor

A method for fabricating a transistor comprising:

• forming a dummy gate over a semiconductor body where the body is disposed on a first dielectric layer;
• forming source and drain regions in the body thereby defining a channel region in the body between the source and drain regions;
• forming a second dielectric layer over the first dielectric layer;
• removing the dummy gate;
• seeding the first dielectric layer under the channel region with ions which enhance the etching of the first dielectric layer;
• etching the first dielectric layer to define an opening under the channel region in the first dielectric layer;
• and
• forming a gate insulation and a conductive gate surrounding the channel region.