Structure with through hole, production method thereof, and liquid discharge head

A method of producing a liquid discharge head comprising a semiconductor substrate, a silicon oxide film and a silicon nitride film, wherein the silicon oxide film and the silicon nitride film are disposed on a first principal surface of the semiconductor substrate, and a through hole is formed to penetrate the semiconductor substrate, the silicon oxide film, and the silicon nitride film, said method comprising:

• forming a sacrificial layer on the first principal surface of the semiconductor substrate, at a position corresponding to a forming position of the through hole;
• forming the silicon oxide film so as to cover the sacrificial layer and the whole of the first principal surface of the semiconductor substrate;
• forming the silicon nitride film on the silicon oxide film;
• and
• thereafter etching the semiconductor substrate from a second principal surface side of the semiconductor substrate so as to remove the sacrificial layer, and etching the silicon oxide film and the silicon nitride film so as to form the through hole.

A method of producing a structure comprising a semiconductor substrate, a circuit element comprising a transistor disposed on a first principal surface of the semiconductor substrate, a silicon oxide film, and a silicon nitride film, wherein the silicon oxide film and the silicon nitride film are disposed on a first principal surface of the semiconductor substrate, and a through hole is formed to penetrate the semiconductor substrate, the silicon oxide film, and the silicon nitride film, said method comprising:

• forming a sacrificial layer on the first principal surface of the semiconductor substrate, at a position corresponding to a forming position of the through hole;
• forming the silicon oxide film so as to cover the sacrificial layer and the whole of the first principal surface of the semiconductor substrate;
• and
• forming the silicon nitride film on the silicon oxide film;
• thereafter, etching the semiconductor substrate from a second principal surface side of the semiconductor substrate so as to remove the sacrificial layer, and etching the silicon oxide film and the silicon nitride film so as to form the through hole.

A method of producing a structure comprising a semiconductor substrate, a silicon oxide film, and a silicon nitride film, wherein the silicon oxide film and the silicon nitride film are disposed on a first principal surface of the semiconductor substrate, and a through hole is formed to penetrate the semiconductor substrate, the silicon oxide film, and the silicon nitride film, said method comprising:

• forming a field oxidization film on the first principal surface of the semiconductor substrate;
• forming a sacrificial layer on the first principal surface of the semiconductor substrate at a position corresponding to a forming position of the through hole in a region partitioned by the field oxidization film;
• forming a BPSG film so as to cover at least the field oxidization film;
• forming the silicon oxide film so as to cover the sacrificial layer and the BPSG film;
• forming the silicon nitride film on the silicon oxide film;
• and
• thereafter, etching the semiconductor substrate from a second principal surface side of the semiconductor substrate so as to remove the sacrificial layer, and etching the silicon oxide film and the silicon nitride film so as to form the through hole.