Trench isolation structure and method of manufacture therefor

A method for manufacturing an integrated circuit, comprising:

• forming trench isolation structures in a substrate, including;
• forming a hardmask over a substrate;
• etching a trench in the substrate through the hardmask;
• forming a liner in the trench;
• depositing an interfacial layer over the liner within the trench and over the hardmask;
• and
• filling the trench with a dielectric material;
• forming transistor devices over the substrate;
• and
• constructing an interlevel dielectric layer over the transistor devices and having interconnects located therein, wherein the interconnects contact the transistor devices to form an operative integrated circuit.

A trench isolation structure, comprising:

• a trench located in a semiconductor substrate;
• a liner located in the trench;
• an interfacial layer located over the oxide liner within the trench, wherein an interface is located between the interfacial layer and the oxide liner;
• and
• a dielectric material fills the trench.