Process and installation for doping an etched pattern of resistive elements
AssigneeSTMicroelectronics S.r.l.
InventorYvon Gris
Life of this patent
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Abstract
A process for selectively doping predetermined resistive elements on an electronic chip is provided. The resistive elements are arranged in a pattern, and there are three phases in the process. The first phase electrically charges selected elements of the pattern. The second phase adds doping atoms to the charged elements as a function of their state of charge. The third phase anneals the electronic chip to cause penetration of the doping agents and to activate them.
Claims21
1-14. (canceled)
An apparatus for selectively doping a pattern of electrically isolated resistive elements, the apparatus comprising:
- a main lock;
- and
- a plurality of chambers accessible through said main lock, said plurality of chambers comprising a first chamber for charging at least one selected element in the pattern, a second chamber for doping the at least one charged element as a function of charge, and a third chamber for annealing the pattern after doping.
An apparatus for selectively doping a pattern of electrically isolated resistive elements on a wafer, the apparatus comprising:
- a main lock;
- and
- a plurality of chambers accessible through said main lock for receiving the wafer and comprising
- a first chamber comprising an electron beam generator for charging at least one selected element in the pattern,
- a second chamber comprising a plasma generator for generating doping ions for doping the at least one charged element as a function of charge, and
- a third chamber comprising a heater for annealing the wafer after doping.
An apparatus for selectively doping a pattern of electrically isolated resistive elements, the apparatus comprising:
- a main lock;
- first, second and third secondary locks in selective communication with said main lock;
- a first chamber associated with said first secondary lock for charging at least one selected element in the pattern;
- a second chamber associated with said second secondary lock for doping the at least one charged element as a function of charge;
- and
- a third chamber associated with said third secondary lock for annealing the pattern after doping.
Dependencies are inferred from the claim text.