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US 2006/0068514 A1Published application
Method of detecting un-annealed ion implants
AssigneeSolid State Measurements, Inc.
InventorWilliam Howland
Life of this patent
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Abstract
A current-voltage response of at least one site of a semiconductor wafer where ions have been implanted in the semiconducting material of the semiconductor wafer is measured prior to annealing the semiconductor wafer. From the measured response, a determination is made whether the ion implantation is within acceptable tolerance(s).
Claims21
A method of determining the efficacy of ion implantation in a semiconductor wafer comprising:
- (a) providing a semiconductor wafer having a substrate of semiconducting material and a screen dielectric layer overlaying the substrate of semiconducting material;
- (b) defining on a surface of the screen dielectric layer opposite the semiconducting material a cured photoresist that includes at least one aperture therethrough where the screen dielectric layer is exposed;
- (c) ion implanting the side of the semiconductor wafer having the photoresist thereon whereupon at least a portion of the ions impacting the screen dielectric layer via the aperture in the photoresist come to rest in the semiconducting material adjacent the aperture;
- (d) removing the photoresist from the semiconductor wafer;
- (e) prior to annealing the semiconductor wafer, forming at least one electrical contact with the surface of either the screen dielectric layer or the substrate of the semiconductor wafer in alignment with or adjacent the semiconducting material containing the ions;
- (f) measuring via the electrical contact an electrical response of the semiconducting material containing the ions in response to the application of an electrical stimulus;
- and
- (g) determining from the measured electrical response whether the ion implantation is within acceptable tolerance(s).
5 more elements
A method of determining the efficacy of ion implantation in a semiconductor wafer comprising:
- (a) providing a semiconductor wafer having at least one site where ions have been implanted in the semiconducting material of the semiconductor wafer;
- (b) prior to annealing the semiconductor wafer of step (a), measuring a current-voltage response of the one site;
- and
- (c) determining from the measured current-voltage response whether the ion implantation is within acceptable tolerance(s).
1 more element
A method of determining the efficacy of ion implantation in a semiconductor wafer comprising:
- (a) measuring via at least one point on a top surface of a semiconductor wafer a post ion implantation current-voltage response of the semiconducting material of the semiconductor wafer prior to annealing the semiconductor wafer to activate the implanted ions;
- and
- (b) determining from the measured current-voltage response whether the ion implantation is within acceptable tolerance(s).
Dependencies are inferred from the claim text.