Substrate processing method
AssigneeTokyo Electron Limited
InventorsKeiji Tanouchi, Satoru Shimura
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Abstract
In the present invention, a substrate processing method, in which a developing treatment is performed after exposure processing of a pattern, includes a shaping step of shaping the shape of a resist pattern such that a side wall portion of the resist pattern after the developing treatment swells out to a groove side and a swell-out portion swelling out to the groove side and concavely curving with respect to the groove side is formed at a corner portion of a bottom of the resist pattern. According to the present invention, the side wall portion is made to swell out to improve the striation of the resist pattern, resulting in a preferable shape of a pattern after etching treatment.
Claims8
A substrate processing method in which a developing treatment is performed after exposure processing of a pattern, comprising:
- a step of supplying a developing solution to a substrate which has been subjected to exposure processing of a pattern;
- and
- a shaping step of shaping the shape of a resist pattern such that a side wall portion of the resist pattern after the developing treatment swells out to a groove side and a swell-out portion swelling out to the groove side and concavely curving with respect to the groove side is formed at a corner portion of a bottom of the resist pattern.
Dependencies are inferred from the claim text.