Exposure method

An exposure method comprising the steps of:

• providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern;
• and
• illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,
• wherein 0.75≦d/t≦0.90 is met where d is a size of an opening in the smaller pattern, and smaller than 0.45 when converted into resolving power k1, and t is a size of an opening in the contact-hole pattern.

An exposure method comprising the steps of:

• providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern;
• and
• illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,
• 0.85L≦t≦1.15L is met where L is a hole diameter of the contact-hole pattern.

A device manufacturing method comprising the steps of:

• exposing a pattern formed on a reticle onto an object by using an exposure method;
• and
• performing a predetermined process for the exposed object,
• wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein 0.7≦d/t≦0.80 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.

A device manufacturing method comprising the steps of:

• exposing a pattern formed on a reticle onto an object by using an exposure method;
• and
• performing a predetermined process for the exposed object,
• wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein 0.75≦d/t≦0.90 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.