Low melting-point solders, articles made thereby, and processes of making same

A composition comprising:

• bismuth in a range from about 42% to about 62%;
• tin in a range from about 19% to about 42%;
• and
• indium in a range from about 7% to about 28%.

A composition comprising:

• from about 33% to about 67% indium;
• from about 32% to about 67% bismuth;
• and
• from about 0% to about 20% tin.

A composition comprising:

• from about 52% to about 54% indium;
• from about 0% to about 2% zinc;
• and
• from about 46% to about 48% tin.

A composition comprising:

• from about 33% to about 67% indium;
• from about 32% to about 67% bismuth;
• and
• from about 0.1% to about 1% zinc.

A package comprising:

• a substrate;
• a solder composition, selected from:
• a first solder including:
• indium in a range from about 36% to about 63%;
• tin in a range from about 28% to about 48%;
• and
• bismuth in a range from about 2% to about 26;
• and
• the solution, mixture, and reaction products of the first solder;
• or
• a second solder including:
• bismuth in a range from about 42% to about 62%;
• tin in a range from about 19% to about 42%;
• indium in a range from about 7% to about 28%;
• and
• the solution, mixture, and reaction products of the first solder;
• and
• a microelectronic device disposed on the substrate, wherein the microelectronic device is coupled to the solder.

A computing system comprising:

• a substrate;
• a solder composition, selected from:
• a first solder including:
• indium in a range from about 36% to about 63%;
• tin in a range from about 28% to about 48%;
• bismuth in a range from about 2% to about 26%;
• and
• the solution, mixture, and reaction products of the first solder;
• or
• a second solder including:
• bismuth in a range from about 42% to about 62%;
• tin in a range from about 19% to about 42%;
• indium in a range from about 7% to about 28%;
• and
• the solution, mixture, and reaction products of the first solder;
• a microelectronic device disposed on the substrate;
• and
• at least one of an input device and an output device coupled to the microelectronic device, wherein the solder is coupled to the microelectronic device.

A process comprising:

• assembling a solder with a structure, the solder including:
• indium in a range from about 36% to about 63%;
• tin in a range from about 28% to about 48%;
• and
• bismuth in a range from about 2% to about 26%.

A process comprising:

• assembling the solder with a structure, the solder including:
• indium in a range from about 69% to about 97%;
• tin in a range from about 28% to about 48%;
• and
• bismuth in a range from about 2% to about 26%.