US 2006/0067374 A1 · Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system

Abstract

In the semiconductor laser device of the present invention, a p-side electrode 115 formed on a second conductive type semiconductor layer group of the layers 108 through 114 includes an Ag layer 115a, a Pd layer 115b and an Au layer 115c in order from the side in contact with the second conductive type semiconductor layer group of the layers 108 through 114. The refractive index of the Ag layer 115a is sufficiently smaller than the refractive index of the semiconductor material used for the semiconductor layer group of the layers 108 through 114. Therefore, the oscillation laser light can be confined in the semiconductor layer group of the layers 108 through 114 without leaking toward the p-side electrode 115.

Claims19

Dependent claims

A semiconductor laser device comprising:

a first conductive type substrate;
an active layer provided on the first conductive type substrate;
a second conductive type semiconductor layer group, which is provided on the active layer and has a stripe-shaped ridge portion in an upper portion;
and
an electrode, which is put in contact with at least one of a side surface of the ridge portion of the second conductive type semiconductor layer group and a surface located in the neighborhood of the ridge portion of the second conductive type semiconductor layer group in a region excluding the ridge portion and an uppermost portion of the ridge portion,
the electrode comprising a layer made of Ag on a side on which the electrode is put in contact with the second conductive type semiconductor layer group.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/210,792Filed 25 Aug 2005

Priority

JP P2004-24654226 Aug 2004

Published

30 Mar 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H01S 5/22
Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or…:…
H01S 5/04252
Electrodes, e.g. characterised by the structure: characterised by the material
H01S 5/04254
Electrodes, e.g. characterised by the structure: characterised by the shape
H01S 5/222
Having special optical properties: having a refractive index lower than that of the cladding layers or outer guiding layers

Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system

Life of this patent

Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system

Life of this patent

Abstract

Claims19