Semiconductor device comprising light-emitting element and light-receiving element, and manufacturing method therefor

A semiconductor device comprising:

• a substrate having a first face comprising a first region, a second region surrounding said first region, and a third region surrounding said second region, and a second face opposing said first face, for transmitting light through said first face and said second face;
• a first wiring layer provided on said first region of said substrate and having a fourth region and a fifth region adjacent to said fourth region;
• second and third wiring layers extending over said second region and said third region of said substrate;
• a first semiconductor chip provided on said first face of said substrate, and electrically connected to said first wiring layer in said fourth region and said second wiring layer provided on said second region;
• a second semiconductor chip provided on said first face of said substrate, and electrically connected to said first wiring layer in said fifth region and said third wiring layer provided on said second region;
• a first columnar electrode provided on said second wiring layer provided on said third region of said substrate, and electrically connected to said second wiring layer;
• a second columnar electrode provided on said third wiring layer provided on said third region of said substrate, and electrically connected to said third wiring layer;
• a sealant constituted by a single resin which covers said first face of said substrate such that a tip end of said first columnar electrode and a tip end of said second columnar electrode are exposed;
• a first external connection terminal provided on said exposed tip end of said first columnar electrode, and electrically connected to said first columnar electrode;
• and
• a second external connection terminal provided on said exposed tip end of said second columnar electrode, and electrically connected to said second columnar electrode.

A semiconductor device comprising:

• a substrate having a first face comprising a first region formed with a semiconductor element and a second region surrounding said first region, and a second face opposing said first face, for transmitting light through said first face and said second face;
• a wiring layer provided on said substrate so as to be electrically connected to said semiconductor element;
• a columnar electrode provided on said wiring layer and having a first face connected to said wiring layer and a second face opposing said first face;
• a sealant constituted by a single resin, which covers said first face of said substrate, excluding said second face of said columnar electrode;
• and
• an external connection terminal provided on said second face of said columnar electrode and connected electrically to said columnar electrode.

A semiconductor device comprising:

• a substrate having a first face comprising a first region formed with a first semiconductor element, a second region formed with a second semiconductor element, and a third region surrounding said first region and said second region, and a second face opposing said first face, for transmitting light through said first face and said second face;
• a first wiring layer having one end and another end and provided on said substrate such that said one end is electrically connected to said first semiconductor element;
• a second wiring layer having one end and another end and provided on said substrate such that said one end is electrically connected to said second semiconductor element;
• a third wiring layer having one end and another end and provided on said substrate such that said one end is connected to said first semiconductor element and said another end is connected to said second semiconductor element, whereby said first semiconductor element and said second semiconductor element are electrically connected;
• a first columnar electrode having a third face and a fourth face opposing said third face, said third face being provided on said another end of said first wiring layer such that said first columnar electrode is electrically connected to said first wiring layer;
• a second columnar electrode having a fifth face and a sixth face opposing said fifth face, said fifth face being provided on said another end of said second wiring layer such that said second columnar electrode is electrically connected to said second wiring layer;
• a sealant constituted by a single resin, which covers said first face of said substrate such that said fourth face of said first columnar electrode and said sixth face of said second columnar electrode are exposed;
• a first external connection terminal provided on said fourth face of said first columnar electrode and electrically connected to said first columnar electrode;
• and
• a second external connection terminal provided on said sixth face of said second columnar electrode and electrically connected to said second columnar electrode.

A manufacturing method for a semiconductor device, comprising the steps of:

• preparing a substrate having a first face and a second face opposing said first face, for transmitting light through said first face and said second face;
• providing a wiring layer having a first region and a second region adjacent to said first region on said first face of said substrate;
• providing a bump electrode on said first region of said wiring layer;
• providing a semiconductor chip having a third face such that said third face is connected to said bump electrode;
• providing a columnar electrode having a fourth face and a fifth face opposing said fourth face such that said fourth face contacts said second region of said wiring layer;
• providing a first sealant covering said first face of said substrate such that said fifth face of said columnar electrode is exposed;
• providing an external connection terminal on said fifth face of said columnar electrode;
• and
• dividing said substrate and said first sealant into individual semiconductor devices through dicing.

A manufacturing method for a semiconductor device, comprising the steps of:

• preparing a substrate having a first face comprising a first region, a second region surrounding said first region, and a third region surrounding said second region, and a second face opposing said first face, for transmitting light through said first face and said second face;
• providing a first wiring layer on said first region of said substrate;
• providing second and third wiring layers extending over said second region and said third region of said substrate;
• providing first and second bump electrodes on said first wiring layer;
• providing a third bump electrode on said second wiring layer provided on said second region of said substrate;
• providing a fourth bump electrode on said third wiring layer provided on said second region of said substrate;
• providing a first semiconductor chip on said first and third bump electrodes;
• providing a second semiconductor chip on said second and fourth bump electrodes;
• providing a first columnar electrode on said second wiring layer provided on said third region of said substrate;
• providing a second columnar electrode on said third wiring layer provided on said third region of said substrate;
• providing a sealant covering said first face of said substrate, excluding a tip end of said first columnar electrode and a tip end of said second columnar electrode;
• providing a first external connection terminal on said exposed tip end of said first columnar electrode;
• providing a second external connection terminal on said exposed tip end of said second columnar electrode;
• and
• dividing said substrate and said sealant into individual semiconductor elements through dicing.

A manufacturing method for a semiconductor device, comprising the steps of:

• preparing a substrate having a first face comprising a first region formed with a first semiconductor element, a second region formed with a second semiconductor element, and a third region surrounding said first region and said second region, and a second face opposing said first face, for transmitting light through said first face and said second face;
• providing a first wiring layer having one end and another end such that said one end is disposed on said first region of said substrate and said another end is disposed on said second region of said substrate;
• providing a second wiring layer having one end and another end such that said one end is disposed on said first region of said substrate and said another end is disposed on said third region of said substrate;
• providing a third wiring layer having one end and another end such that said one end is disposed on said second region of said substrate and said another end is disposed on said third region of said substrate;
• providing a first columnar electrode on said second wiring layer provided on said third region of said substrate;
• providing a second columnar electrode on said third wiring layer provided on said third region of said substrate;
• providing a sealant covering said first face of said substrate such that a tip end of said first columnar electrode and a tip end of said second columnar electrode are exposed;
• providing a first external connection terminal on said exposed tip end of said first columnar electrode;
• providing a second external connection terminal on said exposed tip end of said second columnar electrode;
• and
• dividing said substrate and said sealant into individual semiconductor devices through dicing.